symbol v ds v gs i dm t j , t stg symbol ty p max 73 90 96 125 r jl 63 75 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage drain-source voltage 20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 6.3 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.4 0.9 -55 to 150 t a =70c i d 7.9 AO8808A dual n-channel enhancement mode field effect transistor features v ds (v) = 20v i d = 7.9a (v gs = 10v) r ds(on) < 14m ? (v gs = 10v) r ds(on) < 15m ? (v gs = 4.5v) r ds(on) < 20m ? (v gs = 2.5v) r ds(on) < 28m ? (v gs = 1.8v) esd rating: 2000v hbm general description the AO8808A uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. it is esd protected. standard product AO8808A is pb-free (meets rohs & sony 259 specifications). AO8808Al is a green product ordering option. AO8808A and AO8808Al are electrically identical. d2 g1 s1 s1 d1 g2 s2 s2 1 2 3 4 8 7 6 5 tssop-8 top view g1 d1 s1 g2 d2 s2 alpha & omega semiconductor, ltd.
AO8808A symbol min typ max units bv dss 20 v 10 t j =55c 25 i gss 10 a bv gso 12 v v gs(th) 0.5 0.75 1 v i d(on) 30 a 10.6 14 t j =125c 14.2 18 11.7 15 m ? 15.2 20 m ? 21.5 28 m ? g fs 36 s v sd 0.6 1 v i s 2.4 a c iss 1810 pf c oss 232 pf c rss 200 pf r g 1.6 ? q g 17.9 nc q gs 1.5 nc q gd 4.7 nc t d(on) 2.5 ns t r 7.2 ns t d(off) 49 ns t f 10.8 ns t rr 20.2 ns q rr 8nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =8a, di/dt=100a/ s reverse transfer capacitance turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =1.2 ? , r gen =3 ? turn-on delaytime i f =8a, di/dt=100a/ s switching parameters a v gs =4.5v, v ds =5v v gs =10v, i d =8a gate-body leakage current static drain-source on-resistance v gs =4.5v, i d =5a gate-source breakdown voltage v ds =0v, i g =250ua gate threshold voltage i dss zero gate voltage drain current v ds =v gs i d =250 a v ds =16v, v gs =0v v ds =0v, v gs =10v forward transconductance diode forward voltage v ds =5v, i d =8a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 a, v gs =0v r ds(on) i s =1a,v gs =0v dynamic parameters v gs =0v, v ds =10v, f=1mhz m ? v gs =2.5v, i d =4a maximum body-diode continuous current input capacitance output capacitance v gs =1.8v, i d =3a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =4.5v, v ds =10v, i d =8a gate source charge gate drain charge a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 1: sept 2005 alpha & omega semiconductor, ltd.
AO8808A typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 4.5v 10 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 5 10 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v v gs =2.5v 0 5 10 15 20 25 30 35 40 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =5a v gs =1.8v v gs =1.8v 25c 125c i d =5a alpha & omega semiconductor, ltd.
AO8808A typical electrical and thermal characteristic s 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance 0 1 2 3 4 5 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 ja .r ja r ja =90c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 alpha & omega semiconductor, ltd.
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